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2 edition of Characterization of semi-insulating polycrystalline silicon found in the catalog.

Characterization of semi-insulating polycrystalline silicon

Kevin Michael Brunson

Characterization of semi-insulating polycrystalline silicon

the influence of the structural properties of SIPOS films on the electrical properties of their interfaces with crystalline silicon.

by Kevin Michael Brunson

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  • 19 Currently reading

Published in Bradford .
Written in English


Edition Notes

Ph.D.thesis.Typescript.

SeriesTheses
ID Numbers
Open LibraryOL13979382M

A semi-insulating polycrystalline silicon layer containing oxygen of at least 10 percent by atom is grown on a back surface of a single crystalline silicon wafer, and Optical properties of semi-insulating polycrystalline silicon (SIPOS) thin films containing 30 at. % oxygen atoms are investigated in the near ultraviolet, visible. The polycrystalline silicon layer annealed at °C is significantly recrystallized, with the grain size comparable to the layer thickness. References 1. T. I. Kamins, Polycrystalline silicon for integrated circuits and displays, Kluwer Academic Publisher, 2. T. I. Kamins, Structure and Properties of LPCVD Silicon Films, J. Electrochem.

Deposition and Characterization of Polycrystalline Silicon Thin-Films by Reactive Thermal Chemical Vapour Deposition at °C p Growth of Highly -Oriented Crystalline Silicon Thin Films on Molybdenum by Pulsed DC Magnetron SputteringCited by: 3. Characterization of High-Resistivity Polycrystalline Silicon Substrates for Wafer-Level Packaging and Integration of RF Passives M. Bartek, A. Polyakov, S.M. Sinaga, P.M. Mendes*, J.H. Correia*, and J.N. Burghartz Delft University of Technology, Lab. of High-Frequency Technology and Components,File Size: KB.

A crystallite is a small or even microscopic crystal which forms, for example, during the cooling of many materials. The orientation of crystallites can be random with no preferred direction, called random texture, or directed, possibly due to growth and processing conditions. Characterization of Polycrystalline Silicon Thin-Film Transistors characterization of n-channel TFTs fabricated with laser crystallization and H 2O vapor annealing. V T and V were and V, respectively. They gave the Fermi level and the densities of electron carrier and occupied defect states at the threshold amorphous silicon (a.


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Characterization of semi-insulating polycrystalline silicon by Kevin Michael Brunson Download PDF EPUB FB2

Characterization of semi-insulating polycrystalline silicon Author: Brunson, K. ISNI: Awarding Body: University of Bradford Current Institution: University Characterization of semi-insulating polycrystalline silicon book Bradford Date of Award: Availability of Full Text: Access from EThOS.

The x‐ray photoelectron spectroscopy (XPS) technique has been used to investigate the composition of semi‐insulating polycrystalline silicon (SIPOS) films having oxygen contents of 10 and 35 at. % prepared by low pressure chemical vapor deposition. XPS analysis has demonstrated that the film compositions can be qualitatively described by means of the five Cited by:   Growth and characterization of PECVD semi-insulating polysilicon films and resistors.

Abstract. Semi-insulating polycrystalline (SIPOS) films deposited by plasma-enhanced chemical vapor deposition (PECVD) were investigated. The films were deposited using monosiane, nitrous oxide and argon at ° C in a parallel-plate plasma by: 9.

Abstract Semi-insulating polycrystalline-silicon (SIPOS) films have been used as a replacement of a silicon dioxide passivation layer of planar devices. The SIPOS films are chemically vapordeposited polycrystalline-silicon doped with oxygen or nitrogen atoms.

Characterization by x-ray photoelectron spectroscopy of the chemical structure of semi-insulating polycrystalline silicon thin films: Authors: Iacona, Fabio; Lombardo, Salvatore; Campisano, Salvatore U.

Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol Issue 4, Julypp Thermal Characterization of Polycrystalline SiC. LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties.

Semi-insulating polycrystalline silicon (SIPOS) is a generic name for films of nonstoichiometric silicon oxide deposited by chemical vapor deposition (CVD) using the reaction between silane and oxygen-bearing species such as nitrous by: 3.

Abstract: Electrical characterization of metal-semi-insulating polycrystalline silicon (SIPOS)-Si samples have been carried out using IV, C-V, and C-t techniques. Bulk resistivity and interface properties have been examined.

The results indicate that annealing can give rise to a current barrier at the SIPOS-Si interface that constitutes another mechanism for interface charge Cited by: Electrical and Noise Characterization of Large-Grain Polycrystalline Silicon Thin-Film Transistors pAuthor: E.S.

Ferreira, N.I. Morimoto. In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph­ ous state.

The two extremes of this range attract a large amount of inter­ est. CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC M. Kittler, J. L arz, G. Morgenstern, W. Seifert To cite this version: M. Kittler, J. L arz, G. Morgenstern, W. In order to investigate the interface between polycrystalline‐silicon (poly‐Si) and crystalline silicon (c‐Si), which is of crucial importance for the passivation of high‐voltage devices, an infrared diagnostic method has been developed which is based on a modified attenuated total reflection configuration.

This interface is shown to consist of silicon oxides (mainly SiO 2) in Cited by: 4. An alternative passivation technique which has been developed is the use of semi-insulating polycrystalline silicon (SIPOS) for the passivation film','.

This SIPOS technique has gained a lot of interest in view of its application to planar high voltage devices' Mesa-type high voltage power devices, however, Author: Edmund P.

Burte, Günter H. Schulze. The research is focused in three major areas: (1) deposition and characterization of semi-insulating polycrystalline silicon (SIPOS) as a heterojunction by: 1.

A combination of high resolution electron microscopy (HREM), electron energy loss spectroscopy (EELS), energy dispersive x‐ray analysis (EDXA), and scanning transmission electron microscopy (STEM) techniques has been employed to characterize the structure and composition of vapor‐deposited thin films of semi‐insulating polycrystalline silicon (SIPOS) and their Cited by: Fabrication and Characterization of Polycrystalline Silicon Solar Cells Theme: Master thesis Project Period: P9-P10 Semesters, September 2nd, to June 23rd, Project Group: NFMA Group Members: Kenneth Bech Skovgaard Kim Thomsen Supervisor: Kjeld Pedersen Number of Copies: 5 Number of Pages: Number of Appendices: 2 Total.

Thin-film solar cells are either emerging or about to emerge from the research laboratory to become commercially available devices finding practical various applications. Currently no textbook outlining the basic theoretical background, methods of fabrication and applications currently exist.

Thin-film solar cells are either emerging or about to emerge from the research laboratory to become commercially available devices finding practical various applications. Currently no textbook outlining the basic theoretical background, methods of fabrication and applications currently exist.

Thus, this book aims to present for the first time an in-depth overview of this. His study involved in single electron device, silicon-on-insulator (SOI) and polycrystalline silicon thin-film transistor (TFT) devices with novel Author: K. Huang. Purchase Materials and Process Characterization, Volume 6 - 1st Edition.

Print Book & E-Book. ISBNBook Edition: 1. Characterization of hot N-type plasma doping (PLAD) implantation (n-type) dopants are used at many process steps to dope crystalline silicon, polycrystalline silicon, or other substrates in advanced memory devices.

Arsenic, due to its heavy mass, will readily amorphize crystalline silicon, particularly at high dose rates. Conventional Cited by: 1.rication and Characterization of mm Silicon-on-Polycrystalline-Silicon Carbide Substrates. Journal of Elec-tronic Materials, 41(3) V Lotfi S., Li L-G., Vallin Ö., Vestling L., Norström H., Olsson J.

() LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide for improved RF and thermal properties.Unfortunately, this book can't be printed from the OpenBook. If you need to print pages from this book, we recommend downloading it as a PDF. Visit to get more information about this book, to buy it in print, or to download it as a free PDF.